Semiconductor laser
文献类型：专利
| 作者 | TOKUDA YASUKI; NUNOSHITA MASAHIRO |
| 发表日期 | 1986-01-31 |
| 专利号 | JP1986023386A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a flat grating to be formed and thereby improve the film quality of an active layer formed on this grating, by forming a grating with a periodical refractive index distribution. CONSTITUTION:A part 9 of an n type AlGaAs clad layer 2 is originally formed by an undoped AlGaAs layer. An n type impurity, e.g., Si, is periodically ion- implanted into the part 9 at a predetermined pitch to form a grating. The grating 9 thus formed has a flat configuration, and this facilitates the film growth of a GaAs active layer 8 formed on the grating 9. In the case of employing a vacuum thin film forming technique such as molecular beam epitaxy, an ion implantation process can be carried out in parallel, and it is therefore possible to produce a laser wafer in a through process by the same manufacturing apparatus. |
| 公开日期 | 1986-01-31 |
| 申请日期 | 1984-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89170]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | TOKUDA YASUKI,NUNOSHITA MASAHIRO. Semiconductor laser. JP1986023386A. 1986-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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