中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser

文献类型:专利

作者TOKUDA YASUKI; NUNOSHITA MASAHIRO
发表日期1986-01-31
专利号JP1986023386A
著作权人MITSUBISHI DENKI KK
国家日本
文献子类发明申请
其他题名Semiconductor laser
英文摘要PURPOSE:To enable a flat grating to be formed and thereby improve the film quality of an active layer formed on this grating, by forming a grating with a periodical refractive index distribution. CONSTITUTION:A part 9 of an n type AlGaAs clad layer 2 is originally formed by an undoped AlGaAs layer. An n type impurity, e.g., Si, is periodically ion- implanted into the part 9 at a predetermined pitch to form a grating. The grating 9 thus formed has a flat configuration, and this facilitates the film growth of a GaAs active layer 8 formed on the grating 9. In the case of employing a vacuum thin film forming technique such as molecular beam epitaxy, an ion implantation process can be carried out in parallel, and it is therefore possible to produce a laser wafer in a through process by the same manufacturing apparatus.
公开日期1986-01-31
申请日期1984-09-05
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89170]  
专题半导体激光器专利数据库
作者单位MITSUBISHI DENKI KK
推荐引用方式
GB/T 7714
TOKUDA YASUKI,NUNOSHITA MASAHIRO. Semiconductor laser. JP1986023386A. 1986-01-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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