Semiconductor device and method for manufacturing the same
文献类型：专利
| 作者 | SHIMOYAMA, KENJI; KIYOMI, KAZUMASA; GOTOH, HIDEKI; NAGAO, SATORU |
| 发表日期 | 2001-07-24 |
| 专利号 | US6265733 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and method for manufacturing the same |
| 英文摘要 | The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove. |
| 公开日期 | 2001-07-24 |
| 申请日期 | 1997-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89180]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIMOYAMA, KENJI,KIYOMI, KAZUMASA,GOTOH, HIDEKI,et al. Semiconductor device and method for manufacturing the same. US6265733. 2001-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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