Semiconductor laser with modulator
文献类型：专利
| 作者 | SEKIGUCHI YOSHINOBU |
| 发表日期 | 1991-05-30 |
| 专利号 | JP1991127889A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with modulator |
| 英文摘要 | PURPOSE:To make possible efficient laser oscillation and efficient modulation by a method wherein an active layer and a light guide layer of a multiple quantum well structure are formed sandwiching an isolation layer between them, a laser oscillation part and a modulation part are arranged sandwiching an isolation groove between them and electrodes, which respectively make an independent drive possible to the laser oscillation part and the light guide layer, are provided. CONSTITUTION:A semiconductor laser is constituted into a structure, in which a buffer layer 3 and a clad layer 4 are formed on a substrate 2 with a common electrode 1 mounted on its lower surface and moreover, a laser oscillation part 20 and a modulation part 30 are arranged on the layer 4, sandwiching an isolation groove 12 between the parts 20 and 30 in the propagation direction of light. Accordingly, P-type ohmic electrodes 10 and 11, which respectively can do an independent drive of the parts 20 and 30, are further respectively provided on each cap layer 9 of the parts 20 and 30. As an active layer 7, in which laser oscillation takes place, and a light guide layer 5, in which modulation is performed, are isolated by an isolation layer 6, it becomes possible to form the layer 7 thin and the layer 5 thick. Thereby, a high modulation degree can be obtained at a low oscillation threshold value. |
| 公开日期 | 1991-05-30 |
| 申请日期 | 1989-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89185]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI YOSHINOBU. Semiconductor laser with modulator. JP1991127889A. 1991-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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