Semiconductor laser
文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225983A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a visible-ray laser whose threshold value is low and whose temperature characteristic is good by a method wherein a double heterostructure which is composed of an active layer and a clad layer using a specific AlGaInP- based material is structured on an Si substrate. CONSTITUTION:A double heterostructure where (AlxGa1-x)yIn1-yP (where 0<=x<=1 and 0<=y<=1) is used as an active layer and (AlzGa1-z)wIn1-wP (where 0<=z<=1 and 0<=w<=1) is used as a clad layer is formed on an Si substrate. For example, a semiconductor layer is grown by an MOVPE method. An Si-doped n-GaP clad layer 2, an undoped Ga0.55In0.45P active layer 3 and a Zn-doped p-GaP clad layer 4 are grown on an n-type Si substrate 1 by the MOVPE method. An SiO2 film 5 is formed on it. In order to form a stripe 6 for current injection use, SiO2 is removed selectively in a stripe shape. Lastly, an AuGe alloy or the like is applied as an electrode 8 for n-type use by a vapor deposition method. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89186]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Semiconductor laser. JP1991225983A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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