Semiconductor laser
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1992-05-27 |
| 专利号 | JP1992154185A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase a maximum optical output oscillating in basic mode, more than twice than usual by applying a partial reflective coating, a non- reflective coating, and a high reflective partial coating in a laser having a wide active region. CONSTITUTION:The light generated in a laser active region 11, reaches a non- reflective coating 12 on the rear side and a high reflective partial coating 13 and turns into monitor light 14 without any reflection. The light which has reached the coating 13 is reflected as it is and amplified in the region 11 again. Then, it reaches a partial reflective coating 5 on the front, slightly spreading. This light virtually transmits the coating and it is emitted as a laser output light 16 part of which is reflected on a coating 15 and amplified again in the region 1 Then, the amplified light reaches the coating 12 on the rear and the coating 13, thereby contributing toward laser oscillation, which facilitates oscillation in basic mode. It is, therefore, possible to oscillate at high output in basic mode. |
| 公开日期 | 1992-05-27 |
| 申请日期 | 1990-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89191]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Semiconductor laser. JP1992154185A. 1992-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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