Wavelength variable semiconductor laser device
文献类型：专利
| 作者 | SAKATA HIDEFUMI; YOKOYAMA OSAMU |
| 发表日期 | 1991-10-29 |
| 专利号 | JP1991241883A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wavelength variable semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a variable wavelength laser ray source excellent in efficiency and small in loss, where a semiconductor laser is easily mounted, by a method wherein a grating element and the rear end face of the semiconductor laser high in reflectivity are made to constitute an external resonator using laser rays emitted from one end of the semiconductor laser. CONSTITUTION:A semiconductor laser 5, whose rear end face 7 is enhanced in reflectivity by coating and front face 6 is made low in reflectivity, is enveloped in a package, laser rays emitted from the semiconductor laser 5 are collimated by a collimator lens 2. A part of the collimated rays of narrow band is reflected by a diffraction grating 3 in a direction opposed to the incident ray. The reflected laser rays are fed back to the semiconductor laser 5 traveling reversely the same path and penetrating through the collimator lens 2, and the rear end face 7 high in reflectivity of the semiconductor laser 5 and the diffraction grating 3 constitute an external resonator. |
| 公开日期 | 1991-10-29 |
| 申请日期 | 1990-02-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89192]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SAKATA HIDEFUMI,YOKOYAMA OSAMU. Wavelength variable semiconductor laser device. JP1991241883A. 1991-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。