Manufacture of semiconductor laser device
文献类型：专利
| 作者 | NAKAO ICHIRO |
| 发表日期 | 1986-08-13 |
| 专利号 | JP1986180493A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To improve heat dissipation from a semiconductor laser device surface to a heat sink and to reduce deterioration due to distortion on pressure clamping, by smoothening the semiconductor laser device surface having steps and undulations using etching. CONSTITUTION:A smoothed layer is formed on a semiconductor laser device surface having steps and undulations. The planar layer is made by coating resists 8 so that the steps and undulations can be buried in the resists 8. Under dry etching conditions where the resists 8 and an N-type InP layer 7 can be etched at the same etching rate, they are etched till the projection of the layer 7 is removed. Removing the resist 8' being left there, a semiconductor laser device of a mesa burying structure having an approximately smoothed surface can be attained. Thus heat dissipation from the semiconductor laser device to a heat sink can be improved, so that deterioration due to distortion can be reduced when pressure-clamping the semiconductor laser device and the heat sink. |
| 公开日期 | 1986-08-13 |
| 申请日期 | 1985-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89193]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIRO. Manufacture of semiconductor laser device. JP1986180493A. 1986-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。