Semiconductor laser device
文献类型：专利
| 作者 | ABE, KATSUNORI; KIMURA, YUJI; ATSUMI, KINYA; UENO, YOSHIKI; MATSUSHITA, NORIYUKI |
| 发表日期 | 1996-09-24 |
| 专利号 | US5559819 |
| 著作权人 | NIPPONDENSO CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al0.4Ga0.6As clad layer, an n-Al0.2Ga0.8As optical guide layer, an active layer formed of Al0.2Ga0.8As/GaAs multi-quantum well structure, a p-Al0.2Ga0.8As optical guide layer, a p-Al0.4Ga0.6As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 5 mu m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 mu m. |
| 公开日期 | 1996-09-24 |
| 申请日期 | 1995-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89197]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPONDENSO CO., LTD. |
| 推荐引用方式 GB/T 7714 | ABE, KATSUNORI,KIMURA, YUJI,ATSUMI, KINYA,et al. Semiconductor laser device. US5559819. 1996-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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