Semiconductor light emitting element
文献类型：专利
| 作者 | TSUBURAI YASUHIKO; YAMAMOTO MOTOYUKI |
| 发表日期 | 1987-03-07 |
| 专利号 | JP1987052985A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To manufacture an element self-aligningly in one crystal growing process and limit the current without using a current blocking layer which is doped with high concentration impurity and facilitate control of a horizontal mode with a low threshold by laminating P-type layers and N-type layers alternately on a substrate in which a recessed part is provided. CONSTITUTION:A P-type GaAs layer 12a, an N-type GaAs layer 12b, a P-type Ga0.55 Al0.45As cladding layer 13, a Ga0.9Al0.1As active layer 14, an N-type Ga0.55Al0.45As cladding layer 15, and N-type GaAs cap layer 16 and electrode metal films 17 and 18 are successively made to grow on a P-type GaAs substrate 11 in which a groove is formed. In the respective P-type and N-type GaAs layers grown on the groove, the N-type GaAs layer is inverted into the P-type layer by the diffusion of P-type dopant Zn and only one P-N junction is formed above the groove. On the other hand, inversion of the N-type GaAs layer into the P-type layer does not occur on the flat part and a plurality of P-N junctions are formed to provide a current blocking layer self-aligningly. Concerning to the control of a horizontal mode, the width (W) of a current constriction region is determined by the film thickness of the P-N multi-layer film, which functions as the current blocking layer, and precision etching is not necessary to form the groove in the substrate and a little discrepancy can be corrected easily in the crystal growing process so that the yield can be improved. |
| 公开日期 | 1987-03-07 |
| 申请日期 | 1985-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89205]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TSUBURAI YASUHIKO,YAMAMOTO MOTOYUKI. Semiconductor light emitting element. JP1987052985A. 1987-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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