Buried type semiconductor laser
文献类型：专利
| 作者 | TAMURA HIDEO; SUZUKI KAZUO; MATSUMOTO KENJI; KURIHARA HARUKI |
| 发表日期 | 1985-10-14 |
| 专利号 | JP1985202976A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To suppress mode hopping noise and reflecting noise till a high output and to stabilize transversal mode to reduce an astigmatic difference, by constituting so as to concentrate current in a narrower region than a width of the active layer. CONSTITUTION:An N type AlGaAs clad layer 64, an active layer 66, a P type AlGaAs clad layer 68 and a P type GaAs ohmic layer 70 are sequentially formed on an N type GaAs substrate 62 with liquid phase epitaxy. After an SiO2 film 72 is formed thereon with high frequency sputtering, the both sides reaching a portion of the substrate 62 are etched away by employing a photo resist as a mask. Next, current blocking and optical confining layers 76, 78 of P type and N type AlGaAs are formed, a high-resistance region 80 is formed with proton implantation, and then the SiO2 layer 72 is removed. Thereafter, the high-resistance region portion of the ohmic layer 70 is removed, a diffused Zn layer 88 is formed, and electrodes 90, 92 are mounted. |
| 公开日期 | 1985-10-14 |
| 申请日期 | 1984-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,SUZUKI KAZUO,MATSUMOTO KENJI,et al. Buried type semiconductor laser. JP1985202976A. 1985-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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