Manufacture of semiconductor laser
文献类型：专利
| 作者 | ANDO KOJI; YAGI TETSUYA |
| 发表日期 | 1992-02-10 |
| 专利号 | JP1992039987A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enhance the yield of the manufacture of semiconductor laser by forming a striped projection based on a gas phase etching process and analyzing the elements of dopant contained in the exhaust gas used for the gas phase etching. CONSTITUTION:Semiconductor laser under a manufacturing process is etched in a gas phase etching device and the etched portions are introduced into a mass spectrometer where the strength of detection of Zn, which is a dopant, is monitored. When the device starts etching a low resistivity region 8 for a clad layer on Zn low dope p - AlGaAs from the state where a low resistivity layer region 9 is being etched, the detection strength of Zn is lowered, which calls for the suspension of the etching performance immediately. In this manner, etching suspension timing is decided by monitoring the detection strength of monitored particles, which makes it possible to control the depth of etching with high accuracy and hence enhance the yield. |
| 公开日期 | 1992-02-10 |
| 申请日期 | 1990-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89211]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ANDO KOJI,YAGI TETSUYA. Manufacture of semiconductor laser. JP1992039987A. 1992-02-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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