Manufacture of semicondutor laser element
文献类型：专利
| 作者 | IZAWA NOBUYUKI; YONEYAMA KEIICHI; AYABE MASAAKI |
| 发表日期 | 1983-06-08 |
| 专利号 | JP1983096793A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semicondutor laser element |
| 英文摘要 | PURPOSE:To obtain the path in accurate measurements for the titled laser element by a method wherein a semiconductor layer is grown on a semicondutor substrate, and when a shallow current path of V-shaped cross section is provided, p type impurities having a relatively large diffusion coefficient are contained in the substrate, and an n type and V-shaped region is surrounded by a p type region when a heat treatment is repeatedly performed. CONSTITUTION:An n type GaAs layer is epitaxially grown in liquid-phase or vapor phase on the p type GaAs substrate 11 containing the impurities such as Zn having a relatively large coefficient of diffusion, and a shallow groove of V-shaped cross section which does not reach the substrate 11 is formed by performing an etching in the center part of the layer 12. Then, a p type GaAlAs layer 14, a p type or n type GaAs active layer 15, an n type GaAlAs layer 16, and an n type GaAs layer 17 are grown by lamination on the whole surface burying said groove. The laser element is thus constituted, the Zn which is a p type impurity contained in the substrate 11 in advance by the heat generated when performing an epitaxial growing method on each layer, is diffused by pushing up into the layer 12, and the current path area containing the groove 13 is formed into exactly the prescribed area size using the p type layer 18 which was generated when the above diffusion was performed. |
| 公开日期 | 1983-06-08 |
| 申请日期 | 1981-12-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89212]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | IZAWA NOBUYUKI,YONEYAMA KEIICHI,AYABE MASAAKI. Manufacture of semicondutor laser element. JP1983096793A. 1983-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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