Semiconductor luminescent device
文献类型：专利
| 作者 | TAKAGI NOBUYUKI |
| 发表日期 | 1985-03-14 |
| 专利号 | JP1985047488A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminescent device |
| 英文摘要 | PURPOSE:To enable to obtain a semiconductor laser element, whose threshold-value current is low and luminous efficiency is high, at a higher yield by a method wherein the optical waveguide region is made to coincide with the current region in a self- matching way. CONSTITUTION:A triangular diffusion source 9, whose one side face is facing a layer 8, is provided on the P type layer 8 and a substrate is constituted. A high- resistance first clad layer 2, an active layer 1 and an N type second clad layer 3 are successively laminated on the substrate. An electrode layer 12 is formed on the upper layer of the layer 3. In this semiconductor luminescent device, when impurities are diffused in the range indicated by dotted lines from the diffusion source 9, for example, conductivity is given to only the part of the layer 2, where is included in the range, and the other parts of the layer 2 remain to be high-resistance. Accordingly, in case bias voltage is impressed in the forward direction between the layer 8 and the layer 12, current flows to only the impurity diffusion region of the layer 2, particulary concentrates in the vicinity of the protruded tip part of the diffusion source 9 and only the part of the layer 1, where is opposed to the protruded tip part of the diffusion source 9, becomes a luminous region. That is, the optical waveguide region and the current region are made to mutually coincide in a self-matching way. |
| 公开日期 | 1985-03-14 |
| 申请日期 | 1983-08-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89218]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TAKAGI NOBUYUKI. Semiconductor luminescent device. JP1985047488A. 1985-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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