Wavelength variable semiconductor laser
文献类型：专利
| 作者 | YAMAZAKI HIROYUKI |
| 发表日期 | 1992-04-07 |
| 专利号 | JP1992105386A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wavelength variable semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to enable the title laser to perform a wide-range wave length variable operation as the laser maintains flat FM modulation characteristics by a method wherein a multilayer structure is formed into the form of a mesa, a second conductivity type semiconductor contact layer is formed on parts, which come into contact with a second conductivity type semiconductor layer, of the structure, an electrode on a first conductivity type semiconductor layer is divided into a plurality in the longitudinal direction of a mesa stripe and a diffraction grating is formed adjoining a tuning layer or an active layer. CONSTITUTION:A diffraction grating is formed on the surface of a P-type (100) InP substrate 1, an InGaAsP tuning layer 2, an n-type InP semiconductor layer 3, an InGaAsP active layer 4 and a p-type InP clad layer 5 are grown in order and a multilayer structure consisting of the layers 2, 3, 4 and 5 is formed into the form of a mesa using an SiO2 film formed in the orientation as a mask. The faces (011) vertical to the surface are respectively formed on the side surfaces of the mesa. Subsequently, an n-type InP layer 3 is grown with a mesa stripe on both sides of the layer 3, the SiO2 film used as the mask is removed using a hydrofluoric acid, an SiO2 film 7 is again deposited and thereafter, a patterning is performed to form p electrodes 8 and an n electrode 10 and a p electrode 11 is formed on the rear of the substrate. |
| 公开日期 | 1992-04-07 |
| 申请日期 | 1990-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89219]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI HIROYUKI. Wavelength variable semiconductor laser. JP1992105386A. 1992-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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