Group iii nitride semiconductor optical device
文献类型：专利
| 作者 | FUKUDA, KAZUHISA; SASAOKA, CHIAKI; KIMURA, AKITAKA |
| 发表日期 | 2006-03-23 |
| 专利号 | WO2006030845A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Group iii nitride semiconductor optical device |
| 英文摘要 | A semiconductor laser excelling in current injection efficiency. There is provided an inner stripe type semiconductor laser comprising p-type cladding layer (309) having a superlattice structure composed of, alternately superimposed on each other, GaN layers and Al0.1Ga0.9N layers. The p-type cladding layer (309) has portion of high dislocation density and portion of low dislocation density. That is, the dislocation density is relatively high in a region right above current constriction layer (308), while the dislocation density is relatively low in a region right above opening of the current constriction layer (308). |
| 公开日期 | 2006-03-23 |
| 申请日期 | 2005-09-15 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89220]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | FUKUDA, KAZUHISA,SASAOKA, CHIAKI,KIMURA, AKITAKA. Group iii nitride semiconductor optical device. WO2006030845A1. 2006-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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