Optical and electronic integrated circuit
文献类型：专利
| 作者 | OOTA ATSUSHI; KURODA KENICHI |
| 发表日期 | 1986-11-14 |
| 专利号 | JP1986256783A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical and electronic integrated circuit |
| 英文摘要 | PURPOSE:To facilitate the forming process of electrodes, by forming the electrodes so that the upper electrode of a semiconductor laser and the electrode of a driving electronic element region for the laser are provided in the same plane, on the same substrate. CONSTITUTION:On a semi-insulating GaAs substrate 1, an undoped AlGaAs layer 14, an N-type AlGaAs layer 6, which is a lower clad layer, an N-type GaAs layer 7, which is an active layer, an N-type AlGaAs layer 8, which an upper clad layer, and an N-type GaAs layer 15, which is a cap layer, are sequentially formed. Then, in a semiconductor laser part 30, a Zn diffused region, P layer, a Zn driving layer, and a P layer 17 are formed. The layer 15 on the FET part 40 is etched so that the surface of a contact layer 3 in an FET part 40 agrees with the surface of the layer 15 in the laser part 30. A high resistance AlGaAs layer 18, an N-type GaAs layer, which is an active layer, and the N GaAs layer 3, which is a contact layer, are formed thereon. Thus, the surface of the laser part and the surface of the FET part 40 can be provided in he same plane, and the electrode forming processes can be made easy. |
| 公开日期 | 1986-11-14 |
| 申请日期 | 1985-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89221]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OOTA ATSUSHI,KURODA KENICHI. Optical and electronic integrated circuit. JP1986256783A. 1986-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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