Gallium nitride-based compound semiconductor laser and method of manufacturing the same
文献类型：专利
| 作者 | OKAZAKI, HARUHIKO; FUJIMOTO, HIDETOSHI; ISHIKAWA, MASAYUKI; NUNOUE, SHINYA; HATAKOSHI, GENICHI; YAMAMOTO, MASAHIRO |
| 发表日期 | 1999-10-12 |
| 专利号 | US5966396 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride-based compound semiconductor laser and method of manufacturing the same |
| 英文摘要 | A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers. |
| 公开日期 | 1999-10-12 |
| 申请日期 | 1997-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89223]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | OKAZAKI, HARUHIKO,FUJIMOTO, HIDETOSHI,ISHIKAWA, MASAYUKI,et al. Gallium nitride-based compound semiconductor laser and method of manufacturing the same. US5966396. 1999-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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