Buried-type semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | MATSUYAMA TAKAYUKI; KINOSHITA JUNICHI |
| 发表日期 | 1991-01-17 |
| 专利号 | JP1991009590A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried-type semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve controllability of the width of an active layer by providing an active layer on semiconductor substrate of a first conductivity type, by burying this active layer in a first buried layer of a second conductivity type and by providing an ohmic layer of the second conductivity type and a second buried layer on the first buried layer. CONSTITUTION:A semiconductor substrate 10 of a first conductivity type, an active layer 12 formed of a stripe in the shape of a mesa on the semiconductor substrate 10, a first buried layer 13 of a second conductivity type wherein the active layer 12 is buried, an ohmic layer 14 of the second conductivity type formed on the first buried layer 13, and a second buried layer 16 of the first conductivity type formed on the ohmic layer 14 except for the upper part of the active layer 12, are provided. Accordingly, the width of the active layer 12 is not dependent on the film thickness of a p-InP clad layer differently from a conventional buried-type semiconductor laser device and, besides, a process of etching in the shape of an inverted mesa is dispensed with. Due to these advantages, controllability of the width of the active layer 12 can be improved. |
| 公开日期 | 1991-01-17 |
| 申请日期 | 1989-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89226]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MATSUYAMA TAKAYUKI,KINOSHITA JUNICHI. Buried-type semiconductor laser device and manufacture thereof. JP1991009590A. 1991-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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