Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SUZUKI YASUHIRO; MIKAMI OSAMU |
| 发表日期 | 1991-02-14 |
| 专利号 | JP1991034485A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To facilitate manufacture and to increase an efficiency of coupling to an optical fiber by a method wherein an active region of a semiconductor laser is formed of a superlattice structure and a part of an active layer is made to be a semiconductor crystal turned into a mixed crystal by mixing in of an impurity, while d waveguide region being adjacent to the direction of emission of the active region is made to be a semiconductor crystal turned into a mixed crystal without mixing the impurity in a superlattice layer. CONSTITUTION:An N-type clad layer 2, a superlattice layer 3 to be an active layer and a waveguide layer, an upper clad layer 5 and a cap layer 6 are made to grow epitaxially on a substrate 1 by using a crystallization method of molecular beam epitaxy or the like. SiO2 is deposited by a plasma CVD method or the like and the upper part of a laser region is removed by a technique of photolithography or reactive ion etching. Heat treatment is applied in a state wherein the superlattice side patterned by the SiO2 and another GaAs wafer are superposed, a superlattice in the lower part of an SiO2 film is thereby turned into a mixed crystal partially, so as to form the waveguide layer 4, and a workpiece thus prepared is sealed in an ampule of ZnAs2 and SiO2 and subjected to heat treatment. Then, the SiO2 is removed, a P-type electrode 7 is evaporated, and lastly an N-type electrode is evaporated on the reverse surface of the substrate |
| 公开日期 | 1991-02-14 |
| 申请日期 | 1989-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89232]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SUZUKI YASUHIRO,MIKAMI OSAMU. Semiconductor laser and manufacture thereof. JP1991034485A. 1991-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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