Surface-emitting type semiconductor laser device
文献类型：专利
| 作者 | IGA KENICHI; FURUSAWA KOTARO; IBARAKI AKIRA; ISHIKAWA TORU |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283480A |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface-emitting type semiconductor laser device |
| 英文摘要 | PURPOSE:To sharply improve a semiconductor laser of this design in heat dissipating property by a method wherein a heat diffusion layer is interposed between an active region of a semiconductor multilayer film and a GaAs substrate. CONSTITUTION:An area light emitting type semiconductor laser device is assembled in a structure of so-called junction-up type where a heat sink is provided under an electrode 13, a voltage is applied between electrodes 12 and 13 in this state to enable an active region 5 to emit light, resonance is made to start between a reflecting mirror 3 of semiconductor multilayered film and a reflecting mirror 10 of dielectric multilayered film, and a laser beam is emitted as shown by an arrow. Heat released from the active region 5 is conducted to an AlAs heat diffusion layer 2 through the reflecting mirror 3, diffused by the layer 2, conducted to a GaAs substrate 1, and dissipated through a heat sink. Heat of the active region 5 is released only from a prism whose diameter is D. |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89234]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,FURUSAWA KOTARO,IBARAKI AKIRA,et al. Surface-emitting type semiconductor laser device. JP1991283480A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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