Manufacture of buried semiconductor laser
文献类型：专利
| 作者 | FURUYAMA HIDETO; KUROBE ATSUSHI |
| 发表日期 | 1988-07-28 |
| 专利号 | JP1988182883A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried semiconductor laser |
| 英文摘要 | PURPOSE:To improve reproducibility on manufacturing and to upgrade element performance, by performing crystal growth of semiconductor multilayered films inclusive of a quantum well active layer and using heat treatment to perform internal diffusion of impurities ranging from a high concentration impurity addition layer to the quantum well active layer. CONSTITUTION:A first conductivity clad layer 2 and a high concentration impurity addition layer 3 are formed on a semiconductor substrate 1 and a fixed width of groove is formed to reach the first clad layer 2, and next semiconductor multilayered films 5, 6, and 7 inclusive of a quantum well active layer 5 are formed thereon. Thereafter heat treatment is used to perform impurity diffusion ranging from the high concentration impurity addition region 3 to the active layer 5. The high concentration impurity addition region 3 is not required to be in contact with the active layer and only required to be disposed at a distance where a necessary impurity concentration is available by heat treatment, and this distance may be determined in consideration of controllability for heat treatment. |
| 公开日期 | 1988-07-28 |
| 申请日期 | 1987-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89235]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,KUROBE ATSUSHI. Manufacture of buried semiconductor laser. JP1988182883A. 1988-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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