Manufacture of semiconductor laser
文献类型：专利
| 作者 | KAWAMA YOSHITATSU |
| 发表日期 | 1988-06-23 |
| 专利号 | JP1988150983A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a high efficiency semiconductor laser having a less leakage current by forming a thin second conductivity type layer for controlling the leakage current on a first conductivity block layer, growing a second conductivity type clad layer in a groove and then sequentially an undoped active layer and a first conductivity type clad layer, then removing an insulating film, and growing a second conductivity type block layer. CONSTITUTION:A P-type InP layer for controlling a leakage current is thinly formed on an N-type InP block layer 2 grown on a P-type InP crystal substrate A dovetail- shaped groove 11 which penetrates a P-type InP layer 9 and the N-type InP block layer 2 from an SiO2 insulating film 10 formed on the layer 9 is formed. The same film as the film 10 is formed on a part in which the film 10 and an N-type InP clad layer 6 are exposed on an undoped InGaAsP active layer 5 grown on a P-type InP clad layer 4 grown on the groove 1 The film 10 is removed by removing the flat part on the N-type InP clad layer, the remaining film 10 except a P-type InP block layer 3 of the same material as the layer 9, grown to a height of not covering the remaining film 10 is removed, the same layer as the layer 6, an N-type InGaAsP contact layer 7, and electrodes 8 are sequentially formed on the surface of a wafer, and an electrode 8 are also formed on the lower surface of the substrate. |
| 公开日期 | 1988-06-23 |
| 申请日期 | 1986-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89236]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAWAMA YOSHITATSU. Manufacture of semiconductor laser. JP1988150983A. 1988-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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