Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; HIRAYAMA NORIYUKI |
| 发表日期 | 1990-01-25 |
| 专利号 | JP1990023687A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate variation in oscillation peak wavelength due to current variation of longitudinal mode, to make a distribution in Gaussian shape and to reduce noises by specifying lattice matching rate of active layer of an InGaAsP layer and an InP clad layer. CONSTITUTION:An n-InP clad layer 2, an n-InGaAsP active layer 3, a p-InP clad layer 4 and a p-InP layer 6 and an n-InP layer 7 as current block layers are formed on an n-InP substrate A p-InGaAsP cap layer 5 is further formed thereon. Ohmic electrodes 8, 9 are attached to such an epitaxial substrate and an edge surface is cleaved to make an oscillator structure. A lattice matching rate ¦DELTAa/a¦ between the n-InP clad layer 2 and the p-InP clad layer 4 is made in a range smaller than 5X10 and larger than 7X10. |
| 公开日期 | 1990-01-25 |
| 申请日期 | 1988-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89240]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,HIRAYAMA NORIYUKI. Semiconductor laser. JP1990023687A. 1990-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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