中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser and semiconductor optical device using this

文献类型:专利

作者MATSUMOTO SHINICHI
发表日期1991-10-21
专利号JP1991235391A
著作权人NIPPON TELEGR & TELEPH CORP
国家日本
文献子类发明申请
其他题名Semiconductor laser and semiconductor optical device using this
英文摘要PURPOSE:To facilitate the mounting of a semiconductor optical element and the manufacture of a current constriction type semiconductor laser by a method wherein a first semiconductor crystal layer is formed at a desired position utilizing a window in an insulting layer which is formed on a semiconductor crystal substrate. CONSTITUTION:A first semiconductor crystal layer 2 which is used as a first clad layer is formed on a region facing a window 22 is an insulating layer 21 on a semiconductor crystal substrate 1 by an epitaxial growth method. Thereby, side surface 3a and 3b of a second semiconductor crystal layer 3 which is used as an active layer constitute resonator surfaces and when a semiconductor crystal element to which a laser beam is inputted can be easily mounted on the substrate in a state that the element is favorably optically-coupled. Moreover, as the layer 2 is locally constituted on the substrate 1 and the layer 3, a third semiconductor crystal layer 4, which is used as a second clad layer, and a fourth semiconductor crystal layer 9, which is used as a layer with an electrode, are formed in such a way that the layers 3, 4 and 9 are extended along the whole outer surface of the layer 2. Consequently this device fulfills the functions of a current constriction type semiconductor layer, and the manufacture of the laser can be facilitated.
公开日期1991-10-21
申请日期1990-02-09
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89245]  
专题半导体激光器专利数据库
作者单位NIPPON TELEGR & TELEPH CORP
推荐引用方式
GB/T 7714
MATSUMOTO SHINICHI. Semiconductor laser and semiconductor optical device using this. JP1991235391A. 1991-10-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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