Semiconductor laser and semiconductor optical device using this
文献类型:专利
作者 | MATSUMOTO SHINICHI |
发表日期 | 1991-10-21 |
专利号 | JP1991235391A |
著作权人 | NIPPON TELEGR & TELEPH CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser and semiconductor optical device using this |
英文摘要 | PURPOSE:To facilitate the mounting of a semiconductor optical element and the manufacture of a current constriction type semiconductor laser by a method wherein a first semiconductor crystal layer is formed at a desired position utilizing a window in an insulting layer which is formed on a semiconductor crystal substrate. CONSTITUTION:A first semiconductor crystal layer 2 which is used as a first clad layer is formed on a region facing a window 22 is an insulating layer 21 on a semiconductor crystal substrate 1 by an epitaxial growth method. Thereby, side surface 3a and 3b of a second semiconductor crystal layer 3 which is used as an active layer constitute resonator surfaces and when a semiconductor crystal element to which a laser beam is inputted can be easily mounted on the substrate in a state that the element is favorably optically-coupled. Moreover, as the layer 2 is locally constituted on the substrate 1 and the layer 3, a third semiconductor crystal layer 4, which is used as a second clad layer, and a fourth semiconductor crystal layer 9, which is used as a layer with an electrode, are formed in such a way that the layers 3, 4 and 9 are extended along the whole outer surface of the layer 2. Consequently this device fulfills the functions of a current constriction type semiconductor layer, and the manufacture of the laser can be facilitated. |
公开日期 | 1991-10-21 |
申请日期 | 1990-02-09 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/89245] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON TELEGR & TELEPH CORP |
推荐引用方式 GB/T 7714 | MATSUMOTO SHINICHI. Semiconductor laser and semiconductor optical device using this. JP1991235391A. 1991-10-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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