Semiconductor device
文献类型：专利
| 作者 | YAMAGOSHI SHIGENOBU |
| 发表日期 | 1988-01-23 |
| 专利号 | JP1988016689A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain a semiconductor device which has a high speed, or a high output, a high temperature operation without reducing a resistance value of a buried layer at the time of burying and growing a buried semiconductor device by forming II-IV compound semiconductor layer in contact with the operating region of III-V compound semiconductor. CONSTITUTION:An n-type InP layer 2 as a clad layer, an undoped InGaAs layer 3 as an active layer, a p-type InP layer 4 as a clad layer, and a p type InGaAsP layer 5 as a contact layer are sequentially grown on an n type InP substrate 1, and a III-V compound semiconductor layer structure to become an operating region is grown. Then, it is mesa etched except a light emitting unit, and Znx1-yCd1-xSeyTe1-y layer or ZnuCd1-uSvSe1-v layer of II-VI compound semiconductor of high resistance matched in lattice to InP as a buried layer 6 is formed by a second growth. A semiconductor layer structure is coated with an SiO2 layer 7 as an insulating layer, the active layer is opened with a Ti/Pt/Au layer 8 as a p-type side electrode and an AuGe/Au layer 9 is formed as an n-type side electrode on the rear surface of the substrate. |
| 公开日期 | 1988-01-23 |
| 申请日期 | 1986-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89247]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGOSHI SHIGENOBU. Semiconductor device. JP1988016689A. 1988-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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