Manufacture of semiconductor laser
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1990-06-19 |
| 专利号 | JP1990159785A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser of this design to oscillate stably in a base mode by a method wherein a layer to which impurity is introduced is selectively etched to remove excluding the part of the layer nearby a stripe which serves as an oscillating region, and then impurity is forcibly diffused. CONSTITUTION:An SiO2 film 6 formed on the whole substrate is processed into stripe, and Zn as an impurity is diffused as far as it reaches to a clad layer 2 to form an impurity introduced region 7. The part of a quantum well active layer at the impurity introduced region 7 is made disordered and becomes a stripe-like buried structure. Then, the substrate is vertically etched to remove this part of the impurity introduced region. Thereafter, the substrate is subjected to a thermal treatment in an arsenic atmosphere through a closed tube method to forcibly diffuse Zn for the formation of a forced diffusion region 8. By this setup, an impurity is forcibly diffused, whereby a disordered region on both the sides of a quantum well active layer can be made thick and consequently a laser of this design can oscillate stably in a base mode. |
| 公开日期 | 1990-06-19 |
| 申请日期 | 1988-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89250]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Manufacture of semiconductor laser. JP1990159785A. 1990-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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