Manufacture of semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078278A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability, reproducibility, and the flatness of surface by burying a light wave guide path with II-VI compound semiconductor, and applying resist thereon, and baking it at a specified temperature, and then etching it by RIBE. CONSTITUTION:An n-GaAs buffer layer 102, an n-Al0.5Ga0.5As clad layer 103, an Al0.15Ga0.85As active layer 104, a p-Al0.5Ga0.5As clad layer 105, and a p-GaAs contact layer 106 are stacked in order on an n-GaAs substrate 101 so as to form a substrate in DH structure. This is etched to the middle of the layer 105, using a mask such as SiO2, etc., so as to form a rib shaped light wave guide path. ZnSe film is grown, and at the flat part excluding the rib region, single crystal ZnSe 109, and on the light wave guide path, polycrystalline ZnSe 108, are formed. Resist is applied on the surface and is baked at 80 deg. or higher, and then it is etched by RIBE, thus a P-type electrode 111 and an N-type electrode 112 are formed. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89251]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Manufacture of semiconductor laser. JP1991078278A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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