Semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1992-01-13 |
| 专利号 | JP1992007887A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device whose astigmatism is little by selecting the composition capable of sufficiently confining light and carrier to an active layer composition, as a clad layer composition. CONSTITUTION:A clad layer 4 on the upper side of an active layer 3 is constituted of P-type (AlxGa1-x)0.5In0.5P, and has the following; a stripe type mesa structure formed by partially thickening a layer, a P-type GaInP layer 5 on the upper surface, a GaAs layer 6 on the upper front surface of said structure, and a P-type (AlxGa1-y)0.5In0.5P (y>X) layer 7 on the upper front surface. As to the thickness of the layer 6, quantum level of the part except the upper surface of the P-type GaInP layer 5 becomes larger than the energy gap of the active layer. In this case, current is injected only in the mesa part, the GaAs layer 6 can not absorb the light of the active layer, and the refractive index of the P-type layer 7 is smaller than that of the P-type clad layer 4. Thereby a real refractive index type waveguide mechanism which does not use light absorption is obtained, and the astigmatism can be restricted in a small range. |
| 公开日期 | 1992-01-13 |
| 申请日期 | 1990-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Semiconductor laser device. JP1992007887A. 1992-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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