Manufacture of semiconductor laser
文献类型：专利
| 作者 | MUSHIGAMI MASAHITO; TANAKA HARUO; FUKADA HAYAMIZU |
| 发表日期 | 1991-02-05 |
| 专利号 | JP1991027584A |
| 著作权人 | ROHM CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a light absorption layer from depositing during a thermal cleaning by laminating a deposition preventive layer on the absorption layer, then forming a stripe groove, and thermally cleaning it. CONSTITUTION:A lower clad layer 20 made of Alx1Ga1-x1As, an active layer 21 made of Alx3Ga1-x2As, a first upper clad layer 22 made of Alx3Ga1-x3, a light absorption layer 23 made of GaAs, and a deposition preventive layer 24 made of Alx4Ga1-x4As with x4>0.1 of composition ratio are sequentially laminated on a GaAs substrate 10. Then, a stripe groove 30 which arrives at the layer 22 is formed at the lateral center of the substrate 10. Then, the substrate 10 is thermally cleaned by radiating arsenic molecular beam to the substrate 10 while heating the substrate 10 to deposit impurities adhered to the surface of the substrate 10. Then, an upper clad layer 25 made of AlyGa1-yAs and a cap layer 26 made of a high impurity concentration GaAs are laminated on the substrate 10. |
| 公开日期 | 1991-02-05 |
| 申请日期 | 1989-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89257]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO LTD |
| 推荐引用方式 GB/T 7714 | MUSHIGAMI MASAHITO,TANAKA HARUO,FUKADA HAYAMIZU. Manufacture of semiconductor laser. JP1991027584A. 1991-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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