Distributed reflector type semiconductor laser element
文献类型：专利
| 作者 | YUKITANI TAKESHI; KASUKAWA AKIHIKO; OKAMOTO HIROSHI |
| 发表日期 | 1991-10-29 |
| 专利号 | JP1991242988A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflector type semiconductor laser element |
| 英文摘要 | PURPOSE:To improve coupling efficiency of a light emitting unit to a reflector by providing the unit having a quantum well structure of GaInAsP on an InP substrate, and mixture crystallizing a waveguide having a diffraction grating for forming a distributed reflector with a layer containing a quantum wall structure of the same structure as that of the unit. CONSTITUTION:A barrier layer made of Ga0.14In0.76As0.55P0.45 and an active layer 14 having a multiplex quantum well structure including 5 well layers made of Ga0.45In0.55As are grown on an n-type InP substrate 3, part of the layer 14 is mixture crystallized to form a waveguide layer 15. Then, a diffraction grating 6 is provided on the layer 15, and a p-type InP clad layer 7 and an electrode contact layer 8 are laminated. Thereafter, in order to provide a current narrowing structure 9, growths are conducted twice. Thus, since a light emitted from an active layer 2 has no refractive index difference, it can be efficiently coupled to the waveguide 15. |
| 公开日期 | 1991-10-29 |
| 申请日期 | 1990-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89260]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | YUKITANI TAKESHI,KASUKAWA AKIHIKO,OKAMOTO HIROSHI. Distributed reflector type semiconductor laser element. JP1991242988A. 1991-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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