Distributed feedback type semiconductor laser device
文献类型：专利
| 作者 | KAYANE NAOKI; TSUJI SHINJI; OOISHI AKIO; KASHIWADA YASUTOSHI |
| 发表日期 | 1985-07-15 |
| 专利号 | JP1985132380A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser device |
| 英文摘要 | PURPOSE:To perform a semiconductor laser controlled in a single cascade mode by periodically providing a metal and utilizing a light absorption loss due to the metal. CONSTITUTION:An N type InP buffer layer 2, an active layer 3 and a photoguide layer 4 are sequentially laminated on an N type InP substrate 1, and a Ti film 5 is deposited thereon. The photoguide layer has a refractive index smaller than the active layer and larger than a clad layer. A Ti film is selectively removed with the diffraction grating of a photoresist film as a mask to form a diffraction grating of the Ti film. A P type InP layer 6 and a P type layer 7 are laminated thereon, Zn is diffused on the surface, and a CrAu electrode 8 is then deposited. An AuGeNi-Au electrode 9 is deposited on the InP substrate side. When a current is applied, a light is emitted from an InGaAsP active layer, a laser oscillation occurs in the oscillation wavelength according to the period of the grating, thereby obtaining a stable single mode laser oscillation. |
| 公开日期 | 1985-07-15 |
| 申请日期 | 1983-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,TSUJI SHINJI,OOISHI AKIO,et al. Distributed feedback type semiconductor laser device. JP1985132380A. 1985-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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