Semiconductor laser device
文献类型：专利
| 作者 | MATSUEDA HIDEAKI; YAMASHITA SHIGEO |
| 发表日期 | 1987-01-24 |
| 专利号 | JP1987015871A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser capable of a modulating operation at ultrahigh speed by incorporating an electrostatic induction or ballistic type transistor in a laser diode itself or fabricating such a transistor in close proximity with the laser diode to thereby lower floating impedance related to wiring or the like. CONSTITUTION:A first clad layer 7, active layers 5, 6 and a second clad layer 4 are provided on a semiconductor substrate 8 for laser oscillation, and a fourth semiconductor layer 3 which absorbs laser light is provided on the second clad layer 4. An opening 14 is provided in the fourth semiconductor layer 3, and a predetermined grid layer 9 is disposed within the opening 14 so that the grid layer 9 is connected to the fourth semiconductor layer 3. A fifth semiconductor layer 2 is disposed on the fourth semiconductor layer 3 including the opening 14. A first electrode 12 is provided on the reverse side of the semiconductor substrate 8, a second electrode 10 on the fifth semiconductor layer 2, and a third electrode 11 on the fourth semiconductor layer 3. In addition, a means which constitutes a resonator for laser oscillation is provided. The active layers 5 and 6 have, for example, a superlattice structure, and, for example, an impurity region is provided underneath and in contact with the second electrode 10. |
| 公开日期 | 1987-01-24 |
| 申请日期 | 1985-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89267]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | MATSUEDA HIDEAKI,YAMASHITA SHIGEO. Semiconductor laser device. JP1987015871A. 1987-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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