Manufacture of optical semiconductor device
文献类型：专利
| 作者 | SUGAWARA MITSURU |
| 发表日期 | 1987-04-18 |
| 专利号 | JP1987084580A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor device |
| 英文摘要 | PURPOSE:To flatten the surface of a buried type semiconductor laser, and to inhibit leakage currents by thickly growing a high resistance layer up to the thickness capable of flattening, covering a projecting section in a light-emitting section, introducing an impurity to the high resistance layer on an active layer through a diffusion, an ion implantation, etc. in order to ensure a current injection path to the active layer and lowering a resistance value. CONSTITUTION:An InGaAsP layer 2 as an active layer and a P-InP layer (a clad layer) 3 as a first semiconductor layer are grown on a semiconductor layer 1 formed onto a semiconductor substrate in succession, and these layers on both sides of a light-emitting region and one part of the N-InP substrate 1 are removed, thus shaping a projecting section. A P-InP layer (a buried layer) 4 having high resistance is grown so that the surface is flattened, covering said projecting section as a second semiconductor layer. A P-type impurity is introduced to the P-InP layer layer 4 just above the active layer 2, thus shaping a P type region 5 so as to reach the P-InP layer 3 from the surface. |
| 公开日期 | 1987-04-18 |
| 申请日期 | 1985-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89271]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SUGAWARA MITSURU. Manufacture of optical semiconductor device. JP1987084580A. 1987-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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