Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MANNOU MASAYA; OGURA MOTOTSUGU |
| 发表日期 | 1991-06-11 |
| 专利号 | JP1991136389A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To stabilize a lateral mode with a low threshold current by sequentially providing first conductivity type first buried layers to become current narrowing layers at both sides of a mesa structure and a second conductivity type second buried layer to become a contact layer in this order, and forming the surface flat and uniform in a second conductivity type. CONSTITUTION:A n-type AlGaInP clad layer 2, a GaInP active layer 3, a p-type AlGaInP clad layer 4, a p-type GaInP layer 5, a p-type GaAs contact layer 6 are sequentially epitaxially grown on an n-type GaAs substrate Then, a p-type GaAs contact layer 6 is selectively dry etched by using Cl2 gas to form a vertical mesa. Then, the layers 4, 5 are etched to form a stripelike mesa structure. Thereafter, an n-type GaAs buried layer 7 and a p-type GaAs buried layer 8 are continuously grown by second MOVPE growth. The layers 7 at both sides of the stripelike mesa structure become current narrowing layers, the surface becomes uniform second conductivity type and substantially flat, and the layer 8 on the first buried layer becomes a contact layer connected to the second conductivity type contact layer. |
| 公开日期 | 1991-06-11 |
| 申请日期 | 1989-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MANNOU MASAYA,OGURA MOTOTSUGU. Semiconductor laser and manufacture thereof. JP1991136389A. 1991-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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