Single mode semiconductor laser device
文献类型：专利
| 作者 | MICHITSUJI YASUNORI; YAMAZOE YOSHIMITSU |
| 发表日期 | 1989-11-22 |
| 专利号 | JP1989290278A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single mode semiconductor laser device |
| 英文摘要 | PURPOSE:To keep an oscillation mode constant, by connecting a specific inductance in series to a control current which is applied to a waveguide part with a common power source, thereby interposing a resistance between the power source and a control electrode. CONSTITUTION:An exciting current passes the first chip resistance 11 and a wire 4 and then, excites the active part of a laser element A current flowing in a waveguide passes an inductance 14 for cutting off high frequencies and a resistance 12 and further, is injected into the active part of the laser element 1 through a wire 5 to generate optical signals which are modulated by the signals to be transmitted. Then, electrodes 2 and 3 are mounted at both active and waveguide parts of a single mode laser possessing the active and waveguide parts and this device permits a control current J to apply to the waveguide part. Although the control current J uses the same power source as that of the exciting current I, the inductance and resistance of 2nH or more are interposed between the above power source and control electrodes. Light-emitting wavelengths thus become stable and no mode jump takes place according to electric currents. |
| 公开日期 | 1989-11-22 |
| 申请日期 | 1988-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89278]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | MICHITSUJI YASUNORI,YAMAZOE YOSHIMITSU. Single mode semiconductor laser device. JP1989290278A. 1989-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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