Manufacture of semiconductor laser
文献类型:专利
作者 | YAMASHITA KOJI; NANBARA SEIJI |
发表日期 | 1992-03-18 |
专利号 | JP1992085982A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser |
英文摘要 | PURPOSE:To measure light emitting energy of a quantum well layer and to easily check the degree of the diffusion depth of a dopant in a high temperature process by forming a monitor wafer formed with a GaAs quantum well layer at the edge of a doping profile in designing. CONSTITUTION:An Se-doped AlyGa1-yAs lower clad layer 1, a GaAs quantum well layer 4, an AlxGa1-xAs active layer 2, a GaAs quantity well layer 4, a Zn-doped AlyGa1-yAs upper clad layer 3 are sequentially grown on a GaAs substrate by an MOVD method to form a monitoring wafer, and then processed at a high temperature of a predetermined temperature or higher. Then, dopant such as Zn, Se, etc., is diffused during processing, and a dopant file is varied at 6 7, 8 9. In this case, the Zn, Se, etc., is diffused in the quantum well layer so that effective quantum well exists in a diffusing depth 10 to be reduced. Accordingly, since a photoluminescence energy 11 is increased, it can be easily evacuated by monitoring it. |
公开日期 | 1992-03-18 |
申请日期 | 1990-07-30 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/89284] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | YAMASHITA KOJI,NANBARA SEIJI. Manufacture of semiconductor laser. JP1992085982A. 1992-03-18. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。