中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Manufacture of semiconductor laser

文献类型:专利

作者YAMASHITA KOJI; NANBARA SEIJI
发表日期1992-03-18
专利号JP1992085982A
著作权人MITSUBISHI ELECTRIC CORP
国家日本
文献子类发明申请
其他题名Manufacture of semiconductor laser
英文摘要PURPOSE:To measure light emitting energy of a quantum well layer and to easily check the degree of the diffusion depth of a dopant in a high temperature process by forming a monitor wafer formed with a GaAs quantum well layer at the edge of a doping profile in designing. CONSTITUTION:An Se-doped AlyGa1-yAs lower clad layer 1, a GaAs quantum well layer 4, an AlxGa1-xAs active layer 2, a GaAs quantity well layer 4, a Zn-doped AlyGa1-yAs upper clad layer 3 are sequentially grown on a GaAs substrate by an MOVD method to form a monitoring wafer, and then processed at a high temperature of a predetermined temperature or higher. Then, dopant such as Zn, Se, etc., is diffused during processing, and a dopant file is varied at 6 7, 8 9. In this case, the Zn, Se, etc., is diffused in the quantum well layer so that effective quantum well exists in a diffusing depth 10 to be reduced. Accordingly, since a photoluminescence energy 11 is increased, it can be easily evacuated by monitoring it.
公开日期1992-03-18
申请日期1990-07-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89284]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORP
推荐引用方式
GB/T 7714
YAMASHITA KOJI,NANBARA SEIJI. Manufacture of semiconductor laser. JP1992085982A. 1992-03-18.

入库方式: OAI收割

来源:西安光学精密机械研究所

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