半導体レーザ
文献类型：专利
| 作者 | 浜田 弘喜 |
| 发表日期 | 1999-02-19 |
| 专利号 | JP2889645B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to oscillate continuously at a high ambient temperature, be manufactured excellent in reproducibility, and stably output laser rays by a method wherein Zn is added to a P-type clad layer as an acceptor, Mg is added to a first layer provided onto an active layer, and a second layer is provided onto the first layer. CONSTITUTION:The following are provided: an N-type GaAs substrate 1; an N-type GaInP buffer layer 2 0.5mum in thickness; an N-type Al GaInP clad layer 3 doped with Se as a donor and 2mum in thickness; an undoped GaInP active layer 4 0.8mum in thickness; a P-type Al GaInO first clad layer 5 doped with Zn as a acceptor and 0.07mum in thickness; a P-type second clad layer 6 doped with Mg as an acceptor and 1mum in thickness; and a P-type GaInP contact layer 7. By this setup, an excellent interface of small defect can be formed between the active layer 4 and the P-type first clad layer 5. |
| 公开日期 | 1999-05-10 |
| 申请日期 | 1990-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89295]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 浜田 弘喜. 半導体レーザ. JP2889645B2. 1999-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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