Semiconductor laser device
文献类型：专利
| 作者 | YAMAZOE YOSHIMITSU |
| 发表日期 | 1983-12-27 |
| 专利号 | JP1983225678A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To effectively pick out a laser beam by a method wherein the light reflecting end face or the projecting end face of the beam of light of the semiconductor laser device is formed into curved surface. CONSTITUTION:An N-clad layer 6, an active layer 5, a P-clad layer 4 and a junction layer 3 are stacked on a substrate 7, and after a groove has been provided on an insulating film 2, both end faces are shaped into cylindrical curved surface by performing an etching. The axis of a cylinder is vertical to the substrate, and the center of a circlar arc 21 is located above the center line 18 of the active layer. Through these procedures, a pick-out end face 11 and a reflection end face 11a are formed, and then an electrode 1, a lead connection part 17 and an electrode 9 are provided. The width of the curved surfaces 11 and 11a is to be made wider than the beam width. When both end faces are curved, the reflection surface of laser is turned to a concave mirror, beam width is widened in the vicinity of a pick-out end face, thereby enabling to reduce the deterioration of the end face, also light is focussed in the center part of the semiconductor, and an oscillation threshold value is reduced. Besides, light is focussed at the desired point outside the element, thereby enabling to perform an easy coupling with an external photo circuit. Also, an advantage in stabilization of the device is obtained when the end face 11 is maintained in a plane state. |
| 公开日期 | 1983-12-27 |
| 申请日期 | 1982-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | YAMAZOE YOSHIMITSU. Semiconductor laser device. JP1983225678A. 1983-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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