半導体レ—ザ
文献类型：专利
| 作者 | 遠藤 健司 |
| 发表日期 | 1996-05-31 |
| 专利号 | JP2522021B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ |
| 英文摘要 | PURPOSE:To reduce the absorption coefficient of a carrier unimplanted area to a laser beam and improve the beam output by composing an active layer in quantum well structure and forming the carrier unimplanted area near the resonator surface of the active layer. CONSTITUTION:A part of the block layer 6 of a semiconductor laser is eliminated in stripe form and the eliminated part, and near a resonator surface it is buried in a burying layer 7, and in the center of the resonator surface it is buried in a burying layer 5. An active layer just under the stripe area acts as an emitting area. The active layer is of quantum well structure composed of a quantum well active layer 3 and clad layers 2 and 4. An implanted carrier is narrowed in the longitudinal direction of the resonator in the burying layer 7, therefore, the quantity of a carrier implanted into the active layer near the resonator surface is by far smaller than that implanted into an excitation area. This makes the active layer at this area almost transparent to a laser beam to cause little optical damage and deterioration and obtain a high output. |
| 公开日期 | 1996-08-07 |
| 申请日期 | 1988-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89303]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 遠藤 健司. 半導体レ—ザ. JP2522021B2. 1996-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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