Manufacture of semiconductor structure
文献类型：专利
| 作者 | FUKUZAWA TADASHI; ITO KAZUHIRO; NAKAMURA HITOSHI; MATSUDA HIROSHI |
| 发表日期 | 1989-09-18 |
| 专利号 | JP1989232715A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor structure |
| 英文摘要 | PURPOSE:To easily manufacture a microscopic quantum fine wire structure in a high degree of uniformly by a method wherein, after the constituent atoms of the ion crystal thin film of a substrate are partly removed using an electron beam holography, crystal is caused to grow by the irradiation of a molecular beam and the like, and semiconductor crystal is selectively made to grow. CONSTITUTION:After a buffer layer such as Al0.3Ga0.7As 9, for example, is formed epitaxially by a molecular beam on a GaAs crystal substrate 8, CaF2 is vapor-deposited in several atomic layers, a CaF2 layer 10 is formed, and an electron beam holography is made to irradiate in a high degree of vacuum atmosphere. At this point, atoms F are removed from the CaF2 of the region having high electron density of a standing wave 7, and a region 11, on the surface of which active Ca atoms appear, is formed. Besides, a Ga-As molecular beam is applied to a sample, GaAs crystal is made to grow only on the region 11 where active Ca atoms exist, and a quantum fine wire 12 is obtained. Then, after the remaining CaF2 is removed by application of an ion beam, an Al0.3 Ga0.7As layer 13 is made to grow using a molecular beam epitaxial growth method, and the quantum fine wire 12 is buried. |
| 公开日期 | 1989-09-18 |
| 申请日期 | 1988-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89305]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,ITO KAZUHIRO,NAKAMURA HITOSHI,et al. Manufacture of semiconductor structure. JP1989232715A. 1989-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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