Semiconductor laser device
文献类型：专利
| 作者 | IIDA SEIJI; MOGI NAOTO |
| 发表日期 | 1982-12-07 |
| 专利号 | JP1982199286A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the laser oscilating threshold values preventing the laser beam from being reflected from the PHS electrode surface by a method wherein the resonator side flat part of the PHS (plated heat sink) electrode is extended longer than the resonator while the end of PHS electrode is formed virtually into the rack type. CONSTITUTION:The multilayered epitaxial layer 22 is provided on the first surface of the GaAs substrate 21 and the ohmic electrode 23 is provided on the second surface of said substrate 21 while the p side ohmic electrode 24 is provided on said layer 22 and the PHS electrode is provided on the p side ohmic electrode. In the crystal end to be the resonator comprising the GaAs substrate 21 and the p type ohmic electrode 24, assuming the length produced by the crystal etching and the length of the resonator flat part of the PHS electrode respectively to be A and B, they must be A<=B. The PHS electrode is formed virtually into the rack type provided with an angle not getting into the region of the laser beam emitting from the resonator. |
| 公开日期 | 1982-12-07 |
| 申请日期 | 1981-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89313]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | IIDA SEIJI,MOGI NAOTO. Semiconductor laser device. JP1982199286A. 1982-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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