Optical and electronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | HASUMI YUJI; TENMIYO JIRO; ASAHI HAJIME; YUKIMAE ATSUO |
| 发表日期 | 1987-11-28 |
| 专利号 | JP1987274790A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical and electronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To increase the light confining effect, and to reduce the threshold current of a photo electron integrating circuit by a method wherein quantum well structure is adopted as the active layer of an LU to enlarge oscillation level density, gain is enhanced to contrive to reduce an oscillation threshold current, and both the sides of the active layer are made to have gradient band gap structure. CONSTITUTION:A second semiconductor layer 4 having gradient band gap structure is consisting of an n-type AlGaAs layer, the rate of composition of Al is (x) at the boundary between a semiconductor layer 3, the rate of composition of Al is zero at the boundary between a semiconductor layer 5, and the rate of composition of Al varies continuously corresponding to thickness of the layer at the midway between them. A third semiconductor layer 5 of narrow gap is consisting of a quantum well layer (impurity concentration is 5X10/cm) of n-type GaAs or undoped GaAs, thickness thereof is the degree of 50-300Angstrom , and to be used as the active layer of a laser diode (LD). A fourth semiconductor layer 6 having gradient band gap structure is consisting of p-type AlGaAs, the rate of composition of Al is zero at the boundary between the semiconductor layer 5, the rate of composition of Al is (x) at the boundary between a fifth semiconductor layer 7, and the rate of composition of Al varies continuously corresponding to thickness of the layer at the midway between them. The fifth semiconductor layer 7 of wide gap is consisting of p-type AlGaAs, and the layer thereof is the part to be used as the clad layer of the LD. |
| 公开日期 | 1987-11-28 |
| 申请日期 | 1986-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89320]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | HASUMI YUJI,TENMIYO JIRO,ASAHI HAJIME,et al. Optical and electronic integrated circuit and manufacture thereof. JP1987274790A. 1987-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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