Semiconductor device
文献类型：专利
| 作者 | OSHIMA HIROYUKI |
| 发表日期 | 1989-09-25 |
| 专利号 | JP1989239967A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To effectively reduce an irregularity in photodetecting brightness by a method wherein a light-emitting element and a photodetector, both composed of a compound semiconductor layer, are formed on an Si substrate to be adjacent to each other, a MOSFET formed to be adjacent to them is used and an optical output of the photodetector is controlled to be constant by using an output signal from the photodetector. CONSTITUTION:Compound semiconductor layers are formed on an Si substrate by an epitaxial growth method; a light-emitting element 201 such as an LED or the like and a photodetector 202 such as a photodiode or the like are made up of the layers. These elements comprise a P-N junctions of the compound semiconductor; voltages are applied in the forward direction in the element 201 and in the reverse direction in the element 202. The light-emitting element and the photodetector are constituted in this manner; a beam of light emitted from the element 201 by a drive current I from a MOSFET element 203 formed to be adjacent to the element 201 is detected by using the element 202; a photoelectric current Ip corresponding to the light intensity is applied to the element 203; the drive current I is controlled in such a way that the Ip becomes constant. By this setup, an optical output becomes stable. |
| 公开日期 | 1989-09-25 |
| 申请日期 | 1988-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89321]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI. Semiconductor device. JP1989239967A. 1989-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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