Buried structure semiconductor laser
文献类型：专利
| 作者 | SAKUMA ISAMU |
| 发表日期 | 1987-05-13 |
| 专利号 | JP1987102583A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried structure semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a BH-LD which is formed with a P-N junction having high withstanding voltage and is largely improved in characteristics by forming a buffer layer made of multiple-element mixed crystal which is hardly thermally decomposed and laminating a current block layer thereon. CONSTITUTION:Two parallel grooves 30, 31 having 5mum of width of the depth arriving at a buffer layer 2 and 3mum of depth are formed in parallel with (011) direction on a multilayer film semiconductor wafer in which an N-type InGaAsP buffer layer 2, an N-type InP clad layer 3, an InGaAsP active layer 4, a P-type InP clad layer 5 are sequentially laminated on an (100) N-type InP substrate Thus, a mesa stripe 10 having 2mum of width and an active layer recombined by light emission is formed. A P-type InP current block layer 6, an N-type InP current block layer 7 are laminated except the upper surface of a mesa on the substrate, and a P-type InP buried layer, and a P-type InGaAsP electrode layer 9 are further grown over the entire surface to obtain a BH-LD. |
| 公开日期 | 1987-05-13 |
| 申请日期 | 1985-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89323]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU. Buried structure semiconductor laser. JP1987102583A. 1987-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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