Semiconductor laser with optical output monitor
文献类型：专利
| 作者 | FUKUDA MITSUO; NOGUCHI ETSUO; TSUZUKI NOBUYORI |
| 发表日期 | 1988-05-13 |
| 专利号 | JP1988108790A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with optical output monitor |
| 英文摘要 | PURPOSE:To form one layer in buried layers in a photodetector corresponding to the buried layer limiting a light-emitting section in upper and lower electrodes having different conductivity, to increase a light-receiving area and to reduce dark currents resulting from the buried layers by giving energy smaller than the band gap energy of a light-emitting layer to one layer in the buried layers in the photodetector. CONSTITUTION:A laser section 53 and a light-receiving section 54 isolated by an isola tion trench 52 are formed onto an N-type InP substrate 44, and P-type InGaAsP layers 41, 41' are shaped to each of the sections 53 and 54. P-type InP clad layers 42, 42' are formed, and an InGaAsP light-emitting layer 43 is shaped to the section 53 and an InGaAsP layer 43 to the light-receiving section 54. P-type InP layers 49, 49', N-type InP layers 48, 48' and a P-type InGaAsP gap layer 47 and a P-type InGaAsP light- receiving layer 47 are formed to each of the sections 53, 54. A laser electrode+45 and a laser electrode-46 are shaped to the light-emitting layer 43 emitting laser beams 50, and a light-receiving section electrode+51 and a light-receiving section electrode-45 are formed to the light-receiving section 54. The band gap energy of one layer in the light-receiving section is made smaller than that of the light-emitting layer 43. |
| 公开日期 | 1988-05-13 |
| 申请日期 | 1986-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | FUKUDA MITSUO,NOGUCHI ETSUO,TSUZUKI NOBUYORI. Semiconductor laser with optical output monitor. JP1988108790A. 1988-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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