Surface-emission semiconductor laser device
文献类型：专利
| 作者 | YOKOUCHI, NORIYUKI; IWAI, NORIHIRO |
| 发表日期 | 2008-10-16 |
| 专利号 | US20080254566A1 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface-emission semiconductor laser device |
| 英文摘要 | A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film. |
| 公开日期 | 2008-10-16 |
| 申请日期 | 2008-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89348]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOKOUCHI, NORIYUKI,IWAI, NORIHIRO. Surface-emission semiconductor laser device. US20080254566A1. 2008-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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