Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | USHIJIMA ICHIRO |
| 发表日期 | 1990-05-30 |
| 专利号 | JP1990140987A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To suppress a leakage current flowing through a buried layer by regulating the supercooling degree of growing solution when multilayer buried layers are liquid epitaxially grown to form the buried layers in predetermined shapes. CONSTITUTION:When a P-type InP first buried layer 3 is grown, supercooling degree is increased to form films of substantially equal thickness on the side face of a protrusion and a flat part adjacent thereto. When an N-type InP second buried layer 4 is grown, supercooling degree is decreased to grow a thick crystal mainly on a flat part, and the crystal is not considerably grown on the side face of the protrusion. Further, when a P-type InP third buried layer 5 is grown, supercooling degree is increased to form films of substantially uniform thickness on the side face of the protrusion and the flat part adjacent thereto. Accordingly, the layer 5 is brought into contact with the layer 3 on the side face of the protrusion to completely surround the layer 4, and the second buried layer is not brought into direct contact with an N-type InP second clad layer. Thus, a leakage current flowing through the buried layer side can be reduced. |
| 公开日期 | 1990-05-30 |
| 申请日期 | 1988-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89357]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIRO. Manufacture of semiconductor light emitting device. JP1990140987A. 1990-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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