Semiconductor laser
文献类型：专利
| 作者 | OOSHIMA MASAAKI; HIRAYAMA NORIYUKI; TAKENAKA NAOKI; KINO YUKIHIRO |
| 发表日期 | 1985-08-20 |
| 专利号 | JP1985158687A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize longitudinal-mode oscillation by cutting one part of an N-InGaAsP active layer by an InP layer. CONSTITUTION:A V groove is formed in the direction of a (001)N-InP substrate 1, and an N-InGaAsP layer 2, a P-InP layer 3, an N-InP layer 4 and an N-InGaAsP layer 5 are grown. The layer 5 is removed selectively through stripped ethcing in the direction, and only the InP layer 4 is removed selectively through etching. A first clad layer 7, an N-InGaAsP layer 8, a second clad layer 9 and a P-InGaAsP layer 10 are grown. Accordingly, the active layer 7 is formed in structure in which it is cut in the InP layer 4, and longitudinal- mode oscillation is obtained stably when an ohmic electrode is shaped and conducted in the forward direction. |
| 公开日期 | 1985-08-20 |
| 申请日期 | 1984-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89362]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,HIRAYAMA NORIYUKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985158687A. 1985-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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