Semiconductor laser
文献类型：专利
| 作者 | OGURA MUTSURO |
| 发表日期 | 1987-07-28 |
| 专利号 | JP1987171180A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser having structure in which the improvement of a laser outgoing shape and the stabilization of an oscillation mode can also be expected even when an output is enhanced by thickening an active layer by obliquely forming at least one end surface of both end surfaces of said active layer at an angle smaller than perpendicularity to an optical axis along the longitudinal direction of said active layer. CONSTITUTION:At least one end surface 15 of both end surfaces of an active layer 11 constituting an optical resonator is formed as an inclined plane shaping the inclination of an angle thetaa smaller than perpendicularity to an axis Az. The conditions of resonance are satisfied only by upward plane waves W1 vertically projected to the active-layer end surface 15 in plane waves wave- guiding in the active layer 11, and downward plane waves W2 are absorbed through a clad layer 12 as shown in a virtual line or at least the conditions of resonance are not satisfied. Accordingly, phase phi on the laser outgoing end surface 15 is equalized, and a far-field pattern Ir is also changed into a unimodal pattern, in which a peak is positioned at the center, and stabilized. |
| 公开日期 | 1987-07-28 |
| 申请日期 | 1986-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89364]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | OGURA MUTSURO. Semiconductor laser. JP1987171180A. 1987-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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