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文献类型：专利
| 作者 | MITO IKUO |
| 发表日期 | 1993-02-03 |
| 专利号 | JP1993008875B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser, in which the characteristics of vapor growth are utilized and production cost of which can be reduced, by laminating a clad layer, an active layer and a clad layer on a multilayer film substrate in which a buffer layer, a current confinement layer and a cut-off layer are laminated on a semiconductor substrate, an impurity is diffused in a striped manner and a shallow groove is shaped to a diffusion section. CONSTITUTION:A first conductivity type clad layer 6, an active layer 7 and a second conductivity type clad layer 8 are laminated on a multilayer film substrate in which a first conductivity type buffer layer 2, a second conductivity type current confinement layer 3 and a cut-off layer 4 in low impurity concentration are laminated on a first conductivity type semiconductor substrate 1, first conductivity type impurity diffusion 20 in depth reaching the buffer layer 2 is executed in a striped manner and a shallow groove 30 is shaped to said diffusion section 20. The buffer layer 2 such as a p-type InP buffer layer 2, the current confinement layer 3 such as an n-type InP current confinement layer 3, the cut-off layer 4 such as a non-doped InP cut-off layer 4 and a non-doped InGaAsP cap layer 5 are laminated on the substrate 1 such as a p-type InP substrate 1 in succession. The impurity diffusion 20 such as a p-type Zn diffusion region 20 is shaped, the groove 30 is formed on the surface of the region 20, and the clad layer 6 such as a p-type InP cla layer 6, the active layer 7 such as a non-doped InGaAsP active layer 7 and the clad layer 8 such as an n-type InP clad layer 8 are laminated. |
| 公开日期 | 1993-02-03 |
| 申请日期 | 1986-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89370]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MITO IKUO. -. JP1993008875B2. 1993-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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